基于焊层裂纹扩展的IGBT性能退化建模与分析

doi:10.12305/j.issn.1001-506X.2024.09.15

Abstract

Abstract:

Under fatigue load, insulated gate bipolar transistor (IGBT) experience structural damage and performance degradation, impacting the reliability of power electronic systems. To address this, the relationship between solder layer fatigue crack length and thermal resistance is derived based on heat transfer theory, firstly. The Darveaux model is used to characterize the evolution law of solder layer cracks in IGBT, and a new IGBT performance degradation model along with a method for estimating its undetermined coefficients is proposed. Then, considering the non-stationary characteristics of actual working conditions, a variable amplitude fatigue load model for IGBT is established using the response surface methodology. The rainflow counting method and linear cumulative damage criterion are then employed to assess the extent of IGBT performance degradation. Finally, using a type of IGBT product as an example, power cycling tests are conducted, and performance degradation modeling and analysis are carried out based on experimental data, verifying the effectiveness of the models and algorithms.

Key words: insulated gate bipolar transistor (IGBT), degradation modelling, degradation analysis, solder layer fatigue

CLC Number:

TB114.3

Rui KANG, Yubing CHEN, Meilin WEN, Qingyuan ZHANG, Tianpei ZU. Modeling and analysis of IGBT performance degradation based on solder layer crack propagation[J]. Systems Engineering and Electronics, 2024, 46(9): 3031-3039.

Figures/Tables 17

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References 30

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应力	概率分布函数
负载电流/A	N(33.622 7, 5.589 6)
开关频率/kHz	N(2.602 8, 0.790 2)

参数	取值
开通时间/s	5
关断时间/s	5
负载电流/A	50
栅极-发射极电压/V	±15
水冷板温度/℃	50

样本	初始热阻/(K/W)	10×10⁴次循环后热阻/(K/W)	20×10⁴次循环后热阻/(K/W)
IGBT-1	0.378 3	0.380 7	0.405 4
IGBT-2	0.383 1	0.410 8	0.420 5
IGBT-3	0.385 5	0.393 1	0.441 0
IGBT-4	0.399 6	0.412 6	0.425 1

样本	N₀	ΔT/℃
IGBT-1	1 850	51.44
IGBT-2	150	54.20
IGBT-3	250	53.44
IGBT-4	350	54.43

样本	ΔT₁/℃	ΔT₂/℃
IGBT-1	52.03	52.52
IGBT-2	55.07	55.33
IGBT-3	54.12	54.50
IGBT-4	55.09	56.42

Modeling and analysis of IGBT performance degradation based on solder layer crack propagation

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样本	ΔT/℃	相对热阻增长率
IGBT-1	0.1	0
IGBT-2	0.1	0
IGBT-3	0.1	0
IGBT-4	0.1	0

序号	开关频率/kHz	负载电流/A	结温响应/℃
1	2.25	56.027	87.33
2	3.80	18.220	51.04
3	0.70	18.220	49.64
4	2.25	14.783	49.44
5	0.39	35.405	72.29
6	0.70	52.590	92.26
7	4.11	35.405	65.98
8	2.25	35.405	65.54
9	3.80	52.590	85.59

模型形式	序贯p值	修正R²	预测R²
线性	＜0.000 1	0.977 9	0.963 5
二次多项式	0.489 8	0.976 2	0.942 5
三次多项式	0.291 5	0.982 5	0.945 2

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