深空环境下电子器件可靠性研究进展

doi:10.12305/j.issn.1001-506X.2025.04.15

系统工程与电子技术 ›› 2025, Vol. 47 ›› Issue (4): 1184-1194.doi: 10.12305/j.issn.1001-506X.2025.04.15

深空环境下电子器件可靠性研究进展

关旗龙¹, 杭春进¹^,²^,*, 李胜利¹, 唐晓玖¹, 于丹³, 丁颖³

1. 哈尔滨工业大学材料结构精密焊接与连接全国重点实验室, 黑龙江哈尔滨 150001
2. 哈尔滨工业大学郑州研究院, 河南郑州 450000
3. 北京控制工程研究所, 北京 100094

收稿日期:2023-11-07 出版日期:2025-04-25 发布日期:2025-05-28
通讯作者: 杭春进
作者简介:关旗龙 (2000—), 男, 博士研究生, 主要研究方向为电离辐照环境下Sn基钎料焊点可靠性、Sn基钎料焊点氧化行为第一性原理计算
杭春进 (1978—), 男, 教授, 博士, 主要研究方向为极端温度环境微观尺度互连界面特性及失效机理、微纳尺度高导电导热金属颗粒烧结成形动力学和低温下高熔点合金相诱发生长机制及晶向控制原理
李胜利 (1992—), 男, 博士研究生, 主要研究方向为极端温度环境下Sn基钎料焊点拉伸性能及失效机理
唐晓玖 (1997—), 男, 博士研究生, 主要研究方向为深空电离辐照屏蔽材料
于丹 (1979—), 男, 研究员, 博士, 主要研究方向为导航与控制
丁颖 (1978—), 女, 研究员, 博士, 主要研究方向为电子封装工艺

Review on reliability of electronic devices in deep space environment

Qilong GUAN¹, Chunjin HANG¹^,²^,*, Shengli LI¹, Xiaojiu TANG¹, Dan YU³, Ying DING³

1. State Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin 150001, China
2. Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou 450000, China
3. Beijing Institute of Control Engineering, Beijing 100094, China

Received:2023-11-07 Online:2025-04-25 Published:2025-05-28
Contact: Chunjin HANG

摘要/Abstract

摘要：

深空环境(深冷、极高温和强辐射等)严重影响星载器件的性能及可靠性, 影响深空探测航天器安全运行。锗硅(SiGe)器件主要适用于低温和强辐射环境, 碳化硅(SiC)和氮化镓(GaN)半导体是适用于所有极端环境的理想器件。极高温环境下, 器件封装材料服役可靠性成为星载半导体器件进一步发展的巨大挑战。梳理国内外关于硅(Si)、绝缘体上硅(SOI)、SiGe、GaN和SiC器件以及器件封装材料在上述极端环境下的可靠性研究。针对上述半导体器件和封装材料的特点做出了服役环境总结以及使用建议。

关键词: 深空探测, 极端环境, 电子器件, 可靠性, 电子封装

Abstract:

Deep space environments (cryogenic environment, high temperature and intense radiation, etc.) seriously affect the performance and reliability of spaceborne electronics, which impact the safe operation of deep space exploration spacecrafts. SiGe is mostly appropriate for low temperature and intense radiation application. SiC and GaN are great candidates for all the extreme environments. The reliability of packaging materials service in extremely high temperature environments has become a huge challenge to the further development of the spaceborne semiconductor devices. This paper summarizes domestic and international researches on the reliability of Si, SOI, SiGe, GaN, and SiC devices and device packaging materials under the harsh environments. The service environments and usage recommendations of the above semiconductor devices and packaging materials are summarized.

Key words: deep space exploration, extreme environment, electronic devices, reliability, electronic packaging

中图分类号:

TN609

关旗龙, 杭春进, 李胜利, 唐晓玖, 于丹, 丁颖. 深空环境下电子器件可靠性研究进展[J]. 系统工程与电子技术, 2025, 47(4): 1184-1194.

Qilong GUAN, Chunjin HANG, Shengli LI, Xiaojiu TANG, Dan YU, Ying DING. Review on reliability of electronic devices in deep space environment[J]. Systems Engineering and Electronics, 2025, 47(4): 1184-1194.

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星球	环境温度/℃	星球	环境温度/℃
月球	-180~160	水星	-173~427
金星	464	木星	-108
土星	-139	天王星	-224
海王星	-218	火星	-133~27

器件类型	深空环境下电子器件性能
器件类型	低温	高温	辐射
Si	良	差	差
SOI	良	良	优
SiGe	优	良	优
SiC	良	优	优
GaN	优	优	优

金属引线- 焊盘	最高工作温度/℃	缺点
Al-Al	350	力学性能下降
Au-Al^[89]	175	界面处形成AuAl₂ IMC并产生柯肯达尔孔洞
Al-Ni^[92]	300	界面处形成柯肯达尔孔洞
Pt-Al₂O₃	1 100	键合力下降

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深空环境下电子器件可靠性研究进展

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