电子系统高功率微波效应研究进展

doi:10.12305/j.issn.1001-506X.2025.08.02

系统工程与电子技术 ›› 2025, Vol. 47 ›› Issue (8): 2429-2443.doi: 10.12305/j.issn.1001-506X.2025.08.02

电子系统高功率微波效应研究进展

陈凯柏¹(), 高博¹^,*(), 高敏², 余道杰¹, 周晓东³, 宋燕燕¹, 王越¹

1. 中国人民解放军网络空间部队信息工程大学信息系统工程学院，河南郑州 450001
2. 陆军工程大学石家庄校区导弹工程系，河北石家庄 050003
3. 陆军工程大学石家庄校区弹药工程系，河北石家庄 050003

收稿日期:2024-09-10 出版日期:2025-08-31 发布日期:2025-09-04
通讯作者: 高博 E-mail:ckbguessg@163.com;xd_gaobo@163.com
作者简介:陈凯柏（1996—），男，讲师，博士，主要研究方向为高功率微波效应
高　敏（1964—），男，教授，博士，主要研究方向为弹箭信息化
余道杰（1978—），男，教授，博士，主要研究方向为高功率微波、电磁场
周晓东（1976—），男，副教授，博士，主要研究方向为高功率微波效应
宋燕燕（1984—），女，副教授，硕士，主要研究方向为元器件失效分析
王　越（1997—），女，实验员，硕士，主要研究方向为人工智能技术应用
基金资助:
国家自然科学基金（61871405）资助课题

Research progress on high-power microwave effects in electronic systems

Kaibai CHEN¹(), Bo GAO¹^,*(), Min GAO², Daojie YU¹, Xiaodong ZHOU³, Yanyan SONG¹, Yue WANG¹

1. College of Information Systems Engineering，PLA Information Engineering University，Zhengzhou 450001，China
2. Department of Missile Engineering，Army Engineering University （Shijiazhuang Campus），Shijiazhuang 050003，China
3. Department of Ammunition Engineering，Army Engineering University （Shijiazhuang Campus），Shijiazhuang 050003，China

Received:2024-09-10 Online:2025-08-31 Published:2025-09-04
Contact: Bo GAO E-mail:ckbguessg@163.com;xd_gaobo@163.com

摘要/Abstract

摘要：

开展电子系统高功率微波（high-power microwave, HPM）效应研究对信息化战争意义重大。本文基于HPM技术发展历程，首先介绍了电子系统面临的HPM威胁。其次，阐述了电子系统HPM效应研究的主要问题，分析了解析法、数值法和试验法的研究现状。最后，探讨了效应研究的下一步发展趋势。当前，针对复杂电子系统开展HPM效应研究仍面临算法和模型优化、数据精确测量等现实问题。传统理论分析方法可与人工智能技术有机融合，提高计算精度和效率。在大模型技术的驱动下，HPM效应评估技术将进一步发展，有效提升电子系统HPM防护能力。

关键词: 电子系统, 高功率微波, 效应研究, 人工智能, 效应数据库

Abstract:

Conducting research on high-power microwave （HPM） effects in electronic systems is of great significance for information warfare. Based on the development history of HPM technology, this article first introduces the HPM threats faced by electronic systems. Secondly, the main issues of HPM effect research in electronic systems are elaborated, and the research progress of analytical, numerical, and experimental methods is investigated. Finally, the development trends of effect research are discussed. At present, relevant research on HPM effects in complex electronic systems still faces problems such as algorithm and model optimization, precise data measurement, etc. Traditional theoretical analysis methods can be organically integrated with artificial intelligence technology to improve computational accuracy and efficiency. Driven by the technology of large model, HPM effect evaluation technology will further develop, effectively enhancing the HPM protection capability of electronic systems.

Key words: electronic system, high-power microwave （HPM）, effect research, artificial intelligence, effect database

中图分类号:

O 441

陈凯柏, 高博, 高敏, 余道杰, 周晓东, 宋燕燕, 王越. 电子系统高功率微波效应研究进展[J]. 系统工程与电子技术, 2025, 47(8): 2429-2443.

Kaibai CHEN, Bo GAO, Min GAO, Daojie YU, Xiaodong ZHOU, Yanyan SONG, Yue WANG. Research progress on high-power microwave effects in electronic systems[J]. Systems Engineering and Electronics, 2025, 47(8): 2429-2443.

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研究国家	研究机构	脉冲源型号	峰值功率/GW	$ {{r}}{E_{{\mathrm{P}}} } $/kV	中心频率/GHz	脉冲前沿/ns	脉冲宽度/ns	重频/Hz
美国^[6−13]	空军研究实验室	H₃	43	360	1~2	0.13	0.3	2×10³
		H₄	100	—	1~2	0.13	0.5	—
		H₅	15	430	—	0.238	2.5	2×10³
		IRA	—	1280	0.032~3	0.085	0.13	200
		IRA II	—	690	0.070~4	0.085	0.13	400
		JOLT	—	5400	0.050~2	0.085	0.1	600
	中国湖基地	THOR	200	680	0.2~1	0.2	0.4	—
	应用物理电子公司	MG171C500PF	0.4	—	—	0.2	2~3	100
		MG403C2700PF	10	—	—	<5	—	10
		MG831C150NF	230	—	—	1.2~100	—	1
	圣地亚哥国家试验室	SINPER	1	400	0.1~3	0.15	2	1.2×10³
俄罗斯^[14−18]	叶卡捷琳堡电物理研究所	S-500	>15	750	2~4	0.1	0.12	1×10³
	叶卡捷琳堡电物理研究所	RADAN-303B	0.2	—	—	0.25	4	100
	托木斯克强流电子学研究所	SINUS	3.2	4300	—	—	1	100
		—	0.6	690	—	—	0.5	100
		—	—	450	—	0.08	0.23	100
		—	—	440	—	—	1	100
		—	—	500	0.2~0.8	—	2~3	100
		—	—	220	0.1~1	—	2~3	100
		—	—	600	0.39~2	—	0.5	100
		—	—	200	0.15~2.7	—	1	100
		—	—	—	3.1~10.6	0.05	0.2	—
德国^[19−20]	贝尔巴克公司	FPG30P	—	—	—	1	1~500	100
	贝尔巴克公司	FPG5	—	—	—	0.3	1~2	5×10⁵
	代傲防务集团	DS350	2	300	—	—	—	100
	武装技术研究所	—	0.8	<1000	—	0.25	0.5	1×10³
伊朗^[21]	谢里夫理工大学	—	0.006	—	—	—	1.1	4.5×10⁵
荷兰^[22]	埃因霍芬理工大学	—	—	—	—	0.2	1~10	1×10³

算法	算法特点
TLM	依据惠更斯电磁波传播原理，结合Maxwell方程和边界条件求解模型的时域或频域响应，分析模型磁场分布
FIT	通过正交网格完成离散Maxwell方程组的空间离散化，用中心差分代替时间导数，通过显式方程求解电磁场问题，无需进行矩阵求逆运算
FDTD	根据差分形式的Maxwell方程组和模型初始条件、吸收边界条件，在时间轴上对计算元胞内的电磁场数据连续抽样，求解模型的电磁场时空分布
FEM	以变分原理为基础，将模型分割为计算子域，在子域内使用插值函数表示未知量，通过迭代法或直接法求解子域节点边值问题
MOM	将积分方程转换成算子方程，将待求解函数表示为基函数，将基函数代入算子方程并使用权函数获取矩量，得到代数方程组，该方法只需设置吸收边界条件

效应等级	效应现象	现象描述
未知效应	未知	对设备影响或未观察到，无法确定
无效应	无影响	无效应现象
干扰效应	噪声	信号线和电源线的噪声水平升高，导致显示器闪烁或数据速率降低
	位翻转	数据流的位置交替
	失效	电磁干扰导致系统/组件故障
	故障	软件故障或崩溃
损伤效应	闩锁	半导体元件闩锁
	闪络	芯片内闪络/元件内闪络
	片上焊丝熔化	芯片上的导线熔化
	键合线破坏/导线熔化	半导体器件中的键合线熔化

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电子系统高功率微波效应研究进展

Research progress on high-power microwave effects in electronic systems

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