电子系统高功率微波效应研究进展

doi:10.12305/j.issn.1001-506X.2025.08.02

Abstract

Abstract:

Conducting research on high-power microwave （HPM） effects in electronic systems is of great significance for information warfare. Based on the development history of HPM technology, this article first introduces the HPM threats faced by electronic systems. Secondly, the main issues of HPM effect research in electronic systems are elaborated, and the research progress of analytical, numerical, and experimental methods is investigated. Finally, the development trends of effect research are discussed. At present, relevant research on HPM effects in complex electronic systems still faces problems such as algorithm and model optimization, precise data measurement, etc. Traditional theoretical analysis methods can be organically integrated with artificial intelligence technology to improve computational accuracy and efficiency. Driven by the technology of large model, HPM effect evaluation technology will further develop, effectively enhancing the HPM protection capability of electronic systems.

Key words: electronic system, high-power microwave （HPM）, effect research, artificial intelligence, effect database

CLC Number:

O 441

Kaibai CHEN, Bo GAO, Min GAO, Daojie YU, Xiaodong ZHOU, Yanyan SONG, Yue WANG. Research progress on high-power microwave effects in electronic systems[J]. Systems Engineering and Electronics, 2025, 47(8): 2429-2443.

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研究国家	研究机构	脉冲源型号	峰值功率/GW	$ {{r}}{E_{{\mathrm{P}}} } $/kV	中心频率/GHz	脉冲前沿/ns	脉冲宽度/ns	重频/Hz
美国^[6−13]	空军研究实验室	H₃	43	360	1~2	0.13	0.3	2×10³
		H₄	100	—	1~2	0.13	0.5	—
		H₅	15	430	—	0.238	2.5	2×10³
		IRA	—	1280	0.032~3	0.085	0.13	200
		IRA II	—	690	0.070~4	0.085	0.13	400
		JOLT	—	5400	0.050~2	0.085	0.1	600
	中国湖基地	THOR	200	680	0.2~1	0.2	0.4	—
	应用物理电子公司	MG171C500PF	0.4	—	—	0.2	2~3	100
		MG403C2700PF	10	—	—	<5	—	10
		MG831C150NF	230	—	—	1.2~100	—	1
	圣地亚哥国家试验室	SINPER	1	400	0.1~3	0.15	2	1.2×10³
俄罗斯^[14−18]	叶卡捷琳堡电物理研究所	S-500	>15	750	2~4	0.1	0.12	1×10³
	叶卡捷琳堡电物理研究所	RADAN-303B	0.2	—	—	0.25	4	100
	托木斯克强流电子学研究所	SINUS	3.2	4300	—	—	1	100
		—	0.6	690	—	—	0.5	100
		—	—	450	—	0.08	0.23	100
		—	—	440	—	—	1	100
		—	—	500	0.2~0.8	—	2~3	100
		—	—	220	0.1~1	—	2~3	100
		—	—	600	0.39~2	—	0.5	100
		—	—	200	0.15~2.7	—	1	100
		—	—	—	3.1~10.6	0.05	0.2	—
德国^[19−20]	贝尔巴克公司	FPG30P	—	—	—	1	1~500	100
	贝尔巴克公司	FPG5	—	—	—	0.3	1~2	5×10⁵
	代傲防务集团	DS350	2	300	—	—	—	100
	武装技术研究所	—	0.8	<1000	—	0.25	0.5	1×10³
伊朗^[21]	谢里夫理工大学	—	0.006	—	—	—	1.1	4.5×10⁵
荷兰^[22]	埃因霍芬理工大学	—	—	—	—	0.2	1~10	1×10³

算法	算法特点
TLM	依据惠更斯电磁波传播原理，结合Maxwell方程和边界条件求解模型的时域或频域响应，分析模型磁场分布
FIT	通过正交网格完成离散Maxwell方程组的空间离散化，用中心差分代替时间导数，通过显式方程求解电磁场问题，无需进行矩阵求逆运算
FDTD	根据差分形式的Maxwell方程组和模型初始条件、吸收边界条件，在时间轴上对计算元胞内的电磁场数据连续抽样，求解模型的电磁场时空分布
FEM	以变分原理为基础，将模型分割为计算子域，在子域内使用插值函数表示未知量，通过迭代法或直接法求解子域节点边值问题
MOM	将积分方程转换成算子方程，将待求解函数表示为基函数，将基函数代入算子方程并使用权函数获取矩量，得到代数方程组，该方法只需设置吸收边界条件

效应等级	效应现象	现象描述
未知效应	未知	对设备影响或未观察到，无法确定
无效应	无影响	无效应现象
干扰效应	噪声	信号线和电源线的噪声水平升高，导致显示器闪烁或数据速率降低
	位翻转	数据流的位置交替
	失效	电磁干扰导致系统/组件故障
	故障	软件故障或崩溃
损伤效应	闩锁	半导体元件闩锁
	闪络	芯片内闪络/元件内闪络
	片上焊丝熔化	芯片上的导线熔化
	键合线破坏/导线熔化	半导体器件中的键合线熔化

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Research progress on high-power microwave effects in electronic systems

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