深空环境下电子器件可靠性研究进展

doi:10.12305/j.issn.1001-506X.2025.04.15

Abstract

Abstract:

Deep space environments (cryogenic environment, high temperature and intense radiation, etc.) seriously affect the performance and reliability of spaceborne electronics, which impact the safe operation of deep space exploration spacecrafts. SiGe is mostly appropriate for low temperature and intense radiation application. SiC and GaN are great candidates for all the extreme environments. The reliability of packaging materials service in extremely high temperature environments has become a huge challenge to the further development of the spaceborne semiconductor devices. This paper summarizes domestic and international researches on the reliability of Si, SOI, SiGe, GaN, and SiC devices and device packaging materials under the harsh environments. The service environments and usage recommendations of the above semiconductor devices and packaging materials are summarized.

Key words: deep space exploration, extreme environment, electronic devices, reliability, electronic packaging

CLC Number:

TN609

Qilong GUAN, Chunjin HANG, Shengli LI, Xiaojiu TANG, Dan YU, Ying DING. Review on reliability of electronic devices in deep space environment[J]. Systems Engineering and Electronics, 2025, 47(4): 1184-1194.

Figures/Tables 8

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星球	环境温度/℃	星球	环境温度/℃
月球	-180~160	水星	-173~427
金星	464	木星	-108
土星	-139	天王星	-224
海王星	-218	火星	-133~27

器件类型	深空环境下电子器件性能
器件类型	低温	高温	辐射
Si	良	差	差
SOI	良	良	优
SiGe	优	良	优
SiC	良	优	优
GaN	优	优	优

金属引线- 焊盘	最高工作温度/℃	缺点
Al-Al	350	力学性能下降
Au-Al^[89]	175	界面处形成AuAl₂ IMC并产生柯肯达尔孔洞
Al-Ni^[92]	300	界面处形成柯肯达尔孔洞
Pt-Al₂O₃	1 100	键合力下降

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Review on reliability of electronic devices in deep space environment

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