等离子体光源高效率F类GaN射频功率放大器设计

doi:10.12305/j.issn.1001-506X.2025.04.01

系统工程与电子技术 ›› 2025, Vol. 47 ›› Issue (4): 1029-1035.doi: 10.12305/j.issn.1001-506X.2025.04.01

• 电子技术 • 下一篇

等离子体光源高效率F类GaN射频功率放大器设计

王江华¹^,², 贾华²^,*, 宦维定², 单家芳², 刘甫坤²

1. 中国科学技术大学研究生院科学岛分院, 安徽合肥 230026
2. 中国科学院合肥物质科学研究院等离子体物理研究所, 安徽合肥 230031

收稿日期:2023-11-01 出版日期:2025-04-25 发布日期:2025-05-28
通讯作者: 贾华
作者简介:王江华 (1997—), 男, 硕士研究生, 主要研究方向为微波功率放大器
贾华 (1982—), 男, 研究员, 博士, 主要研究方向为射频等离子体光源
宦维定 (1962—), 男, 高级工程师, 硕士，主要研究方向为微波系统测试技术
单家芳 (1962—), 男, 研究员, 博士研究生导师, 博士，主要研究方向为微波工程与等离子体物理
刘甫坤 (1966—), 男, 研究员, 博士研究生导师, 主要研究方向为电磁场与微波技术
基金资助:
中科合肥智能育种加速器创新研究院攻关项目(NB2023001);国家自然科学基金(11675212)

Design of a high-efficiency Class F radio frequency power amplifier using GaN transistor for plasma light source

Jianghua WANG¹^,², Hua JIA²^,*, Weiding HUAN², Jiafang SHAN², Fukun LIU²

1. Science Island Branch, Graduate School of University of Science and Technology of China, Hefei 230026, China
2. Institute of Plasma Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China

Received:2023-11-01 Online:2025-04-25 Published:2025-05-28
Contact: Hua JIA

摘要/Abstract

摘要：

针对高频工作时功率晶体管效率降低引起等离子体光源发光效率减小的问题, 设计一种基于氮化镓(Gallium Nitride, GaN)高电子迁移率晶体管的高效率F类功率放大器。采用输出匹配网络、寄生补偿网络和谐波控制电路合并为一体的输出网络结构, 考虑GaN晶体管的输出电容、引线电感和漏源电容等寄生参数, 理论分析谐波的输出网络阻抗, 并结合仿真计算对输入输出电路进行匹配和设计, 最终完成放大器的加工和测试。实验结果表明, 当输入功率为33.7 dBm时, 功率放大器在915 MHz下实现了80.1%的漏极效率, 输出功率为240.8 W, 增益为20.1 dB, 验证了所设计方法的有效性。设计的功率放大器对提高等离子体光源的发光效率和降低热能管理成本具有较为实用的价值。

关键词: 等离子体光源, F类功率放大器, 谐波控制, 寄生参数

Abstract:

Aiming at the issue of reduced system luminous efficacy of the plasma light source caused by the decreased efficiency of power transistors during high-frequency operation, a high-efficiency Class F power amplifier based on Gallium Nitride (GaN) high electron mobility transistor (HEMT) is designed. An output network structure combining the output matching network, parasitic compensation network, and harmonic control circuit is adopted with the consideration of parasitic parameters of the GaN transistor such as output capacitance, lead inductance, and drain-source capacitance. The output network impedance of harmonics is analyzed theoretically, and the input and output circuits are matched and designed by simulation computation. Finally, the amplifier is fabricated and measured. The experimental results demonstrate that with an input power of 33.7 dBm, the amplifier achieves drain efficiency of 80.1%, an output power of 240.8 W, and a gain of 20.1 dB at 915 MHz, which validates the effectiveness of the proposed design method. The developed power amplifier holds significant practical value for enhancing the luminous efficiency of plasma light sources and reducing thermal management costs.

Key words: plasma light source, Class F power amplifier, harmonic control, parasitic parameter

中图分类号:

王江华, 贾华, 宦维定, 单家芳, 刘甫坤. 等离子体光源高效率F类GaN射频功率放大器设计[J]. 系统工程与电子技术, 2025, 47(4): 1029-1035.

Jianghua WANG, Hua JIA, Weiding HUAN, Jiafang SHAN, Fukun LIU. Design of a high-efficiency Class F radio frequency power amplifier using GaN transistor for plasma light source[J]. Systems Engineering and Electronics, 2025, 47(4): 1029-1035.

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等离子体光源高效率F类GaN射频功率放大器设计

Design of a high-efficiency Class F radio frequency power amplifier using GaN transistor for plasma light source

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