Fig.1

Geometric structure model of the designed C-band CTTO"

Table 1

Key structure parameters of optimized C-band CTTO"

Fig.2

Schematic diagram of the three longitudinal mode intrinsic field distribution of TM01 mode in three-cavity buncher"

Fig.3

Relationship between the normalized electronic conductance and the electron phase of the three kinds of logitudinal modes in the buncher"

Fig.4

Schematic diagram of the two kinds of longitudinal mode intrinsic field distribution of TM01 mode in two-gap extractor"

Fig.5

Plot of the microwave output power and frequency spectrum in the TTO without the reflector"

Fig.6

The variation on the frequency of the voltage waveform with time observed on the cross section of Z=30 mm in the diode region"

Fig.7

Plot of the voltage on the microwave injection port"

Fig.8

Axial electric field distribution in the reflector through HFSS"

Fig.9

Reflection coefficient S11 of TEM mode in the reflector"

Fig.10

Plot of the microwave output power and frequency spectrum in the TTO with the reflector"

Fig.11

Variation on the frequency spectrum of the voltage waveform with time on the cross section of Z=30 mm in the diode region with the reflector"

Fig.12

Plot of the voltage observed on the microwave injection port with the reflector"

Fig.13

Typical phase space plot of the proposed device after saturation"

Fig.14

Axial distribution of the fundamental harmonic current and electron power"

Fig.15

Variation on the axial distribution of fundamental harmonic current and the microwave conversion efficiency with the different distances between the buncher and the reflector"

Fig.16

Power conversion efficiency vs. guide magnetic field of the device"