等离子体光源高效率F类GaN射频功率放大器设计

doi:10.12305/j.issn.1001-506X.2025.04.01

Abstract

Abstract:

Aiming at the issue of reduced system luminous efficacy of the plasma light source caused by the decreased efficiency of power transistors during high-frequency operation, a high-efficiency Class F power amplifier based on Gallium Nitride (GaN) high electron mobility transistor (HEMT) is designed. An output network structure combining the output matching network, parasitic compensation network, and harmonic control circuit is adopted with the consideration of parasitic parameters of the GaN transistor such as output capacitance, lead inductance, and drain-source capacitance. The output network impedance of harmonics is analyzed theoretically, and the input and output circuits are matched and designed by simulation computation. Finally, the amplifier is fabricated and measured. The experimental results demonstrate that with an input power of 33.7 dBm, the amplifier achieves drain efficiency of 80.1%, an output power of 240.8 W, and a gain of 20.1 dB at 915 MHz, which validates the effectiveness of the proposed design method. The developed power amplifier holds significant practical value for enhancing the luminous efficiency of plasma light sources and reducing thermal management costs.

Key words: plasma light source, Class F power amplifier, harmonic control, parasitic parameter

CLC Number:

Jianghua WANG, Hua JIA, Weiding HUAN, Jiafang SHAN, Fukun LIU. Design of a high-efficiency Class F radio frequency power amplifier using GaN transistor for plasma light source[J]. Systems Engineering and Electronics, 2025, 47(4): 1029-1035.

Figures/Tables 12

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References 30

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Design of a high-efficiency Class F radio frequency power amplifier using GaN transistor for plasma light source

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